2012 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsSIVANANTHAN, S; DHAR, N. K.Journal of electronic materials. 2013, Vol 42, Num 11, issn 0361-5235, 372 p.Conference Proceedings

Design of Dislocation-Compensated ZnS_ySe_1―y/GaAs (001) HeterostructuresKUJOFSA, T; AYERS, J. E.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3034-3040, issn 0361-5235, 7 p.Conference Paper

Modeling of Dark Current in HgCdTe Infrared DetectorsFERRON, A; ROTHMAN, J; GRAVRAND, O et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3303-3308, issn 0361-5235, 6 p.Conference Paper

1/f Noise in HgCdTe Focal-Plane ArraysKINCH, M. A; STRONG, R. L; SCHAAKE, C. A et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3243-3251, issn 0361-5235, 9 p.Conference Paper

A Slightly Oxidizing Etchant for Polishing of CdTe and CdZnTe SurfacesIVANITS'KA, V. G; MORAVEC, P; TOMASHIK, V. M et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3059-3065, issn 0361-5235, 7 p.Conference Paper

Advancements in THM-Grown CdZnTe for Use as Substrates for HgCdTeMACKENZIE, Jason; KUMAR, Francis Joseph; CHEN, Henry et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3129-3132, issn 0361-5235, 4 p.Conference Paper

Applications of the Infrared Measurement Analyzer: Hydrogenated LWIR HgCdTe DetectorsBUURMA, Christopher; BOIERIU, Paul; BOMMENA, Ramana et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3283-3287, issn 0361-5235, 5 p.Conference Paper

Characterization of Plasma Etching Process Damage in HgCdTeGAUCHER, A; BAYLET, J; ROTHMAN, J et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3006-3014, issn 0361-5235, 9 p.Conference Paper

Comparison of the Schaake and Benson Etches to Delineate Dislocations in HgCdTe LayersFARRELL, S; RAO, Mulpuri V; BRILL, G et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3097-3102, issn 0361-5235, 6 p.Conference Paper

Impurity Gettering in (112)B HgCdTe/CdTe/Alternate SubstratesBENSON, J. D; BUBULAC, L. O; BRILL, G et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3217-3223, issn 0361-5235, 7 p.Conference Paper

Superlattice and Quantum Dot Unipolar Barrier Infrared DetectorsTING, David Z.-Y; SOIBEL, Alexander; KEO, Sam A et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3071-3079, issn 0361-5235, 9 p.Conference Paper

Interaction Between As_Hg and V_Hg in Arsenic-Doped Hg_1―xCd_xTeZIYAN WANG; YAN HUANG; XIAOSHUANG CHEN et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3054-3058, issn 0361-5235, 5 p.Conference Paper

Issues in HgCdTe Research and Expected Progress in Infrared Detector FabricationGRAVRAND, O; DESTEFANIS, G; VUILLERMET, M et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3349-3358, issn 0361-5235, 10 p.Conference Paper

The Effect of Subbandgap Illumination on the Bulk Resistivity of CdZnTeWRIGHT, Jonathan S; WASHINGTON, Aaron L; DUFF, Martine C et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3119-3124, issn 0361-5235, 6 p.Conference Paper

Atomic-Scale Characterization of II―VI Compound SemiconductorsSMITH, David J.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3168-3174, issn 0361-5235, 7 p.Conference Paper

Simulation of Current Transport in Polycrystalline CdTe Solar CellsTRONI, F; MENOZZI, R; COLEGROVE, E et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3175-3180, issn 0361-5235, 6 p.Conference Paper

Nitrogen Plasma Doping of Single-Crystal ZnTe and CdZnTe on Si by MBEKODAMA, Richard; SELDRUM, Thomas; XIAOJIN WANG et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3239-3242, issn 0361-5235, 4 p.Conference Paper

Investigation of Radiation Collection by InSb Infrared Focal-Plane Arrays with Micro-optic StructuresGUO, N; HU, W. D; CHEN, X. S et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3181-3185, issn 0361-5235, 5 p.Conference Paper

Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase EpitaxyYASUDA, K; NIRAULA, M; NAMBA, S et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3125-3128, issn 0361-5235, 4 p.Conference Paper

TEM Characterization of HgCdTe/CdTe Grown on GaAs(211)B SubstratesJAE JIN KIM; JACOBS, R. N; ALMEIDA, L. A et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3142-3147, issn 0361-5235, 6 p.Conference Paper

Effect of Epilayer Tilt on Dynamical X-ray Diffraction from Uniform Heterostructures with Asymmetric Dislocation DensitiesRAGO, P. B; JAIN, F. C; AYERS, J. E et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3066-3070, issn 0361-5235, 5 p.Conference Paper

Low-Frequency Noise Characteristics of HgCdTe Infrared Photodiodes Operating at High TemperaturesHASSIS, W; GRAVRAND, O; ROTHMAN, J et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3288-3296, issn 0361-5235, 9 p.Conference Paper

Numerical Simulation and Analytical Modeling of InAs nBn Infrared Detectors with p-Type BarriersREINE, Marion; SCHUSTER, Jonathan; PINKIE, Benjamin et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3015-3033, issn 0361-5235, 19 p.Conference Paper

Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/ Si(211) by Scanning Transmission Electron MicroscopyJACOBS, R. N; STOLTZ, A. J; SALMON, M et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3148-3155, issn 0361-5235, 8 p.Conference Paper

Cross-Sectional Study of Macrodefects in MBE Dual-Band HgCdTe on CdZnTeREDDY, M; LOFGREEN, D. D; JONES, K. A et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3114-3118, issn 0361-5235, 5 p.Conference Paper